Identification of Te alloys with suitable phase change characteristics

ELECTRICAL SET-RESET PHENOMENON IN THALLIUM DOPED Ge-Te GLASSES SUITABLE FOR PHASE CHANGE MEMORY APPLICATIONS

Ge17Te83-xTlx (x = 2, 3, 6, 8, 10) glasses have been prepared by melt quenching method and their amorphous nature was confirmed by XRD spectra. I-V characteristics and repeatability of electrical switching were investigated for all the glasses in order to find out their suitability for phase change memory applications. A comparison has been given with Ge2Sb2Te5 the most commonly used material f...

Liquid phase epitaxy growth of Pb , - $ nse with BaF , 1 + Te , , alloys lattice matched

IV-VI semiconductor quaternary alloys lattice matched with BaF2 substrates have been grown by liquid phase ,epitaxy. X-ray diffraction analysis shows that liquid (Pbl-,~Sn,L)0.99(Sel--YLTe~L)0.01 solutions produce Pbt -+Sn,,Ser -rsTey, alloys lattice matched with the substrate when yL=60%, SS%, and 57%, and x,=20%, 40%, and 60%, respectively. These data, which can be used to fabricate lattice-m...

Structural Patterns in Ge/Sb/Te Phase-Change Materials

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Understanding Phase-Change Memory Alloys from a Chemical Perspective

Phase-change memories (PCM) are associated with reversible ultra-fast low-energy crystal-to-amorphous switching in GeTe-based alloys co-existing with the high stability of the two phases at ambient temperature, a unique property that has been recently explained by the high fragility of the glass-forming liquid phase, where the activation barrier for crystallisation drastically increases as the ...

Te-based chalcogenide films with high thermal stability for phase change memory